elektronische bauelemente SST3585 3.5 a, 20v ,rds(on) 75m n and p-channel enhancement mode power mos.fet -2.5 a, -20v ,rds(on) 160m description the SST3585 provide the designer with best combination of fast switching,low on-resistance and cost effectiveness. * low on-resistance features * rohs compliant * low gate charge the sot-26 package is universally used for all commercial-industrial surface mount applications. 15-jun-2010 rev. c page 1 of 7 t otal power dissipation li near derating factor o perating junction and storage temperature range drain-source voltage gate-source voltage continuous drain current continuous drain current pulsed drain current parameter symbol ratings unit thermal data parameter symbo ratings unit thermal resistance junction-ambient a v v a a i d @t a =70 /wc w / c c w v ds v gs i d @t a =25 i dm p d @t a =25 tj, tstg rthj-a 20 12 10 3.5 2.8 1.14 0.01 -55~+150 110 -20 12 -10 -2.5 -1.97 3 3 1 o o o c o c o 3 max. absolute maximum ratings http://www.secosgmbh.com/ any changing of specification will not be informed individual g 1 s 2 g 2 d 1 s 1 d 2 3 5 8 5 date code 1 5 2 3 4 6 d1 g1 g2 s1 d2 s2 dimensions in millimeters 2.60 3.00 0.30 0.55 2.70 3.10 0 0.10 max 0.7 1.45 1.40 1.80 0.45 ref o 10 o sot-26 0.95 ref 0.95 ref 1.90 ref 1.2 ref 0.60 ref www..net
n-channel electrical characteristics( tj=25 unless otherwise specified) total gate charge r ds(on) h t t p : / / w w w .s e c o sg m b h .c o m/ a n y c ha n g i n g o f s pe c if i c a t i o n w ill no t b e i n f o r m ed i nd i v i dual parameter symb ol max. typ. test condition min. unit drain-source breakdown voltage breakdown voltage temp. coefficient gate threshold voltage gate-source leakage current drain-source leakage current (tj=25 ) static drain-source on-resistance drain-source leakage current (tj=70 ) gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time input capacitance output capacitance reverse transfer capacitance bv dss bv ds / tj v gs(th) i gss i dss crss qg qgs qgd td (on) td (off) tr ciss coss t f 20 0.02 0.5 1.2 100 1 10 75 125 4 0.7 2 6 8 10 3 370 55 40 v v / v na ua ua m nc ns pf [ v gs =0v v ds =20v f=1.0mhz v ds =1 5v i d =1a v gs =5v r g =3.3 r d =15 [ [ i d =3a v ds =16v v gs =4.5v v gs =4.5v, i d =3.5a v gs =2.5v, i d =1.2a v gs =0v, i d =250ua v gs = v v ds =20v,v gs =0 v ds =16v,v gs =0 v ds =v gs, i d =250ua reference to 25 , i d =- 1ma _ _ _ source-drain diode _ _ _ _ _ _ _ parameter symbol max. typ. test condition min. unit forward on voltage v ds _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ i s =1.2a , v gs =0v. v 1.2 notes: 1.pulse width limited by max. junction temperature. 2.pulse width 300us, dutycycle 2%. ?? ?? forward transconductance gfs s 7 v ds =5v, i d =3a _ _ _ 230 7 reverse recovery time reverse recovery charge is=3a, v gs =0v _ _ _ _ trr qrr nc ns 16 8 3.surface mounted on 1 in 2 copper pad of fr4 board; 1 o c/w when mounted on min. copper pad. _ dl/dt=100a/us o c o c o c o c o c 12 2 2 2 2 ?? 5sec;180 gate resistance rg 1.1 _ 1.7 [ f=1.0mhz 15 -jun-2010 rev. c page 2 of 7 elektronische bauelemente SST3585 3.5 a, 20v ,rds(on) 75m n and p-channel enhancement mode power mos.fet -2.5 a, -20v ,rds(on) 160m [ [ www..net
15-jun-2010 rev. c page 3 of 7 e l e c t r i c a l c h a r a c t e r i s t i c s ( t j = 2 5 c u n l e s s o t h e r w i s e s p e c i f i e d) p-channel t o t a l g a t e c h a r g e r d s ( o n ) p a r a m e t e r s y m b o l m a x . t y p . t e s t c o n d i t i o n m i n . u n i t d r a i n - s o u r c e b r e a k d o w n v o l t a g e b r e a k d o w n v o l t a g e t e m p . c o e f f i c i e n t g a te t h r es h o l d vo l t a g e g a t e - s o u r c e l e a k a g e c u r r e n t d r a i n - s o u r c e l e a k a g e c u r r e n t ( t j = 2 5 ) s t a t i c d r a i n - so u r c e o n - r e s i s t a n c e d r a i n - s o u r c e l e a k a g e c u r r e n t ( t j = 7 0 ) g a t e - s o u r c e c h a r g e g a t e - d r a i n ( " m i l l e r " ) c h a r g e t u r n - o n d e l a y t i m e r i s e t i m e t u r n - o f f d e l a y t i m e f a l l t i m e i n p u t c a p a c i t a n c e o u t p u t c a p a c i t a n c e r e v e r s e t r a n s f e r c a p a c i t a n c e b v d s s b v d s / t j v g s ( t h ) i g s s i d s s c r s s q g q g s q g d t d ( o n ) t d ( o f f ) t r c i s s c o s s t f - 2 0 - 0 . 0 1 - 1 . 2 1 0 0 - 1 - 2 5 1 2 0 1 6 0 5 1 2 v v / v n a u a u a m n c n s p f [ v g s = 0 v v d s = - 2 0 v f = 1 . 0 m h z v ds = - 1 0 v i d = - 1 a v g s = - 1 0 v r g = 3 . 3 r d = 1 0 [ [ i d = - 2 a v d s = - 1 6 v v g s = - 4 . 5 v v g s = - 1 0 v , i d = - 2 .8a v g s = - 4 . 5 v , i d = - 2 .5a v g s = 0 v , i d = - 2 5 0 u a v g s = v 1 2 v d s = - 2 0 v , v g s = 0 v d s = - 1 6 v , v g s = 0 v d s = v g s , i d = - 2 5 0 u a _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ f o r w a r d t r a n s c o n d u c t a n c e g f s s 4 v d s = - 5 v , i d = - 2 a _ _ 8 o c o c o c o 2 2 2 6 1 7 1 6 5 2 7 0 7 0 5 5 _ _ _ _ 4 3 0 _ _ _ _ r e f e r e n c e t o 2 5 , i d = - 1 m a s o u r c e - d r a i n d i o d e p a r a m e t e r s y m b o l m a x . t y p . t e s t c o n d i t i o n m i n . u n i t f o r w a r d o n v o l t a g e v d s _ _ i s = - 1.2 a , v g s = 0 v . v - 1 . 2 r e v e r s e r e c o v e r y t i m e r e v e r s e r e c o v e r y c h a r g e i s = - 2 a , v g s = 0 v _ _ _ _ t r r q r r nc ns 2 0 1 5 d l / d t = 1 0 0 a / u s 2 2 c o h t p : / / w w w .s e c o sg m b h .c o m/ a n y c ha n g i n g o f s pe c if i c a t i o n w ill no t b e i n f o r m ed i nd i v i dual notes: 1.pulse width limited by max. junction temperature. 2.pulse width 300us, dutycycle 2%. ?? ?? 3.surface mounted on 1 in 2 copper pad of fr4 board; 1 o c/w when mounted on min. copper pad. ?? 5sec;180 _ 3 0 0 _ _ v g s = - 2 . 5 v , i d = - 2 a t elektronische bauelemente SST3585 3.5 a, 20v ,rds(on) 75m n and p-channel enhancement mode power mos.fet -2.5 a, -20v ,rds(on) 160m [ [ www..net
15-jun-2010 rev. c page 4 of 7 elektronische bauelemente SST3585 3.5 a, 20v ,rds(on) 75m n and p-channel enhancement mode power mos.fet -2.5 a, -20v ,rds(on) 160m [ [ characteristics curve n-channel f i g 5. f or w a r d c h ar a c t e r i s t i c s of r e ve r s e d i od e f i g 1. t yp i c al o u t p u t c h ar ac t e r i s t i c s fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 6. gate threshold voltage v.s. junction temperature http://www.secosgmbh.com/ any changing of specification will not be informed individual www..net
http://www.secosgmbh.com/ any changing of specification will not be informed individual 15 -jun-2010 rev. c page 5 of 7 elektronische bauelemente SST3585 3.5 a, 20v ,rds(on) 75m n and p-channel enhancement mode power mos.fet -2.5 a, -20v ,rds(on) 160m [ [ n-channel fig 10. effective transient thermal impedance fig 9. maximum safe operating area fig 8. typical capacitance characteristics fig 7. gate charge characteristics fig 11. transfer characteristics fig 12. gate charge waveform 180 ? ?? ? /w www..net
http://www.secosgmbh.com/ any changing of specification will not be informed individual 15-jun-2010 rev. c page 6 of 7 elektronische bauelemente SST3585 3.5 a, 20v ,rds(on) 75m n and p-channel enhancement mode power mos.fet -2.5 a, -20v ,rds(on) 160m [ [ p-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristics of reverse diode fig 6. gate threshold voltage v.s. junction temperature www..net
elektronische bauelemente SST3585 3.5 a, 20v ,rds(on) 75m n and p-channel enhancement mode power mos.fet -2.5 a, -20v ,rds(on) 160m [ [ p-channe l fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 180 ? ?? ? /w 15 15-jun-2010 rev. c p age 7 of 7 http://www.secosgmbh.com/ any changing of specification will not be informed individual www..net
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